(China (Mainland))
Product Summary
The BC847C is an NPN general purpose transistor. Application is general purpose switching and amplification.
Parametrics
BC847C absolute maximum ratings: (1)Collector-base voltage: 50 V; (2)Collector-emitter voltage: 45 V; (3)Emitter-base voltage: - 6 V; (4)Collector current (DC)- 100 mA; (5)Eak collector current - 200 mA; (6)Peak base current: 200 mA; (7)Total power dissipation: 250 mW; (8)Storage temperature: -65 to +150 °C; (9)Junction temperature: 150 °C; (10)Operating ambient temperature: -65 to +150 °C.
Features
BC847C features: (1)Low current (max. 100 mA); (2)Low voltage (max. 65 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BC847C /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
Negotiable |
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BC847C,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) NPN GP 100MA 45V |
Data Sheet |
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BC847C,235 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
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BC847CDW1T1 |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V Dual NPN |
Data Sheet |
Negotiable |
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BC847CDXV6T5 |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V Dual NPN |
Data Sheet |
Negotiable |
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BC847CM,315 |
NXP Semiconductors |
Transistors Bipolar (BJT) NPN GP 45V 100mA |
Data Sheet |
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BC847CW,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) NPN GP 45V 100mA |
Data Sheet |
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BC847CLT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V NPN |
Data Sheet |
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