(China (Mainland))
Product Summary
The BC847BW is an NPN general purpose transistor. Application is general purpose switching and amplification.
Parametrics
BC847BW absolute maximum ratings: (1)Collector-base voltage open emitter: 50 V; (2)Collector-emitter voltage open base: 45 V; (3)Emitter-base voltage open collector: 5 V; (4)Collector current (DC): 100 mA; (5)Peak collector current: 200 mA; (6)Peak base current: 200 mA; (7)Total power dissipation: 200 mW; (8)Storage temperature: -65 to +150 °C; (9)Junction temperature: 150 °C; (10)Operating ambient temperature: -65 to +150 °C.
Features
BC847BW features: (1)Low current (max. 100 mA); (2)Low voltage (max. 65 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BC847BW |
Other |
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Data Sheet |
Negotiable |
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BC847BW /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-11 |
Data Sheet |
Negotiable |
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BC847BW,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
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BC847BW,135 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-11 |
Data Sheet |
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BC847BW T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
Negotiable |
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BC847BW-7 |
Diodes Inc. |
Transistors Bipolar (BJT) NPN BIPOLAR |
Data Sheet |
Negotiable |
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BC847BWT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 50V NPN |
Data Sheet |
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BC847BW-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) BIPOLAR TRANSISTOR NPN SOT-323 |
Data Sheet |
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