(China (Mainland))
Product Summary
The ap9926m Advanced Power MOSFET from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Parametrics
ap9926m absolute maximum ratings: (1)Drain-Source Voltage: 20V; (2)Gate-Source Voltage: 12V; (3)Continuous Drain Current3, VGS @ 4.5V: 6A; (4)Continuous Drain Current3, VGS @ 4.5V: 4.8A; (5)Pulsed Drain Current1,2: 20A; (6)Total Power Dissipation: 2W; (7)Operating Junction Temperature Range: -55 to 150°C; (8)Storage Temperature Range: -55 to 150°C.
Features
ap9926m features: (1)Low on-resistance; (2)Capable of 2.5V gate drive; (3)Low drive current; (4)Surface mount package.
Diagrams
