(China (Mainland))
Product Summary
The AP60N03S is an n-channel enhancement mode power mosfet. The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
AP60N03S absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Continuous Drain Current, VGS @ 10V: 55 A; (4)Continuous Drain Current, VGS @ 10V: 35 A; (5)Pulsed Drain Current: 215 A; (6)Total Power Dissipation: 62.5 W; (7)Linear Derating Factor: 0.5 W/℃; (8)Storage Temperature Range: -55 to 150 ℃; (9)Operating Junction Temperature Range : -55 to 150 ℃.
Features
AP60N03S features: (1)Low On-Resistance; (2)Fast Switching; (3)Simple Drive Requirement.
Diagrams
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 AP60N03S |
Other |
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Data Sheet |
Negotiable |
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