TPCS8204

TPCS8204, Silicon N Channel MOS Type (U-MOSIII) Effect Transistor, 20 V, 20 kΩ, 6 A, 1.1 W, 10 s, SSOP

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Price:: US $0.40~0.40 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 2628 :	0.40 / Piece

PartNumber:: TPCS8204

Brand:: Toshiba Semiconductor - Toshiba | Pack: | D/C: 05+

Availability:: Supply Ability: 3/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-18

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Part Number:TPCS8204
US $0.40 - 0.40
Quantity:

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Product Summary

The TPCS8204 is a Silicon N Channel MOS Type (U-MOSIII) Effect Transistor. The applications are (1)Lithium Ion Battery Applications; (2)Notebook PC Applications; (3)Portable Equipment Applications.

Parametrics

TPCS8204 absolute maximum ratings: (1)Drain-source voltage VDSS: 20 V; (2)Drain-gate voltage (RGS = 20 kΩ)VDGR: 20 V; (3)Gate-source voltage VGSS: ±12 V; (4)Drain current DC (Note 1)ID: 6 A; (5)Drain current Pulse (Note 1)IDP: 24 A; (6)Drain power operation dissipation (t = 10 s)(Note 2a)Single-device operation (Note 3a): 1.1 W; (7)Drain power operation dissipation (t = 10 s)(Note 2a)Single-device value at dual operation (Note 3b)PD (2): 0.75 W; (8)Drain power dissipation (t = 10 s)(Note 2b)Single-device operation (Note 3a)PD (1): 0.6 W; (9)Drain power dissipation (t = 10 s)(Note 2b)Single-device value at dual operation (Note 3b)PD (2): 0.35 W; (10)Single pulse avalanche energy (Note 4)EAS: 46.8 mJ; (11)Avalanche current IAR: 6 A; (12)Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)EAR: 0.075 mJ; (13)Channel temperature Tch: 150 °C; (14)Storage temperature range Tstg: -55 to 150 °C.

Features

TPCS8204 features: (1)Small footprint due to small and thin package; (2)Low drain-source ON resistance: RDS (ON)= 13 mΩ (typ.); (3)High forward transfer admittance: |Yfs| = 15 S (typ.); (4)Low leakage current: IDSS = 10 μA (max)(VDS = 20 V); (5)Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA).