TPC8102

TPC8102, Silicon P Channel MOS Type (MOSVI) Effect Transistor, 30 V, 20 kΩ, 6 A, 1.0 W, SOP

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Price:: US $0.60~0.60 / piece [Get Latest Price]

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1 ~ 2564 :	0.60 / Piece

PartNumber:: TPC8102

Brand:: Toshiba Semiconductor - Toshiba | Pack: | D/C: 04+

Availability:: Supply Ability: 3/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-18

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Part Number:TPC8102
US $0.60 - 0.60
Quantity:

piece

Product Summary

The TPC8102 is a Silicon P Channel MOS Type (MOSVI) Effect Transistor. Applications are (1)Lithium Ion Battery Applications; (2)Notebook PC Applications; (3)Portable Equipment Applications.

Parametrics

TPC8102 absolute maximum ratings: (1)Drain-source voltage VDSS: -30 V; (2)Drain-gate voltage (RGS = 20 kΩ)VDGR: -30 V; (3)Gate-source voltage VGSS: ±12 V; (4)Drain current DC (Note 1)ID: -6 A; (5)Drain current Pulse (Note 1)IDP: -24 A; (6)Drain power operation dissipation (t = 10 s)(Note 2a): 2.4 W; (7)Drain power dissipation (t = 10 s)(Note 2b)Single-device operation (Note 3a)PD (1): 1.0 W; (8)Single pulse avalanche energy (Note 4)EAS: 47 mJ; (9)Avalanche current IAR: -6 A; (10)Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)EAR: 0.24 mJ; (11)Channel temperature Tch: 150 °C; (12)Storage temperature range Tstg: -55 to 150 °C.

Features

TPC8102 features: (1)Small footprint due to small and thin package; (2)Low drain−source ON resistance : RDS (ON)= 34 mΩ (typ.); (3)High forward transfer admittance : |Yfs| = 9 S (typ.); (4)Low leakage current : IDSS = −10 μA (max)(VDS = −30 V); (5)Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA).