Product Summary
The SI7336DP-T1 is an N-Channel 30-V (D-S) MOSFET. Applications are (1)Low-Side DC/DC Conversion : Notebook; Server; Workstation; (2)Synchronous Rectifier, POL.
Parametrics
SI7336DP-T1 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current (TJ = 150℃)a TA = 25℃: 18 A; (4)Continuous Drain Current (TJ = 150℃)a TA = 70℃: 15A; (5)Pulsed Drain Current (10 s Pulse Width)IDM: 70 A; (6)Continuous Source Current (Diode Conduction)a IS: 1.8 A; (7)Avalanche Current L = 1.0 mH IAS: 50 A; (8)Maximum Power Dissipationa TA = 25℃ PD: 1.9 W; (9)Maximum Power Dissipationa TA = 70℃: 1.2 W; (10)Operating Junction and Storage Temperature Range: -55 to 150 ℃.
Features
SI7336DP-T1 features: (1)Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology; (2)Qg Optimized; (3)New Low Thermal Resistance PowerPAK Package with Low 1.07-mm Profile; (4)100% Rg Tested.
Diagrams

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![]() SI7336DP-T1 |
![]() Vishay/Siliconix |
![]() MOSFET 30V 30A 5.4W 3.25mohm @ 10V |
![]() Data Sheet |
![]() Negotiable |
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| Image | Part No | Mfg | Description | ![]() |
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![]() SI7302DN-T1-E3 |
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![]() MOSFET N-CH 220V PWRPAK 1212-8 |
![]() Data Sheet |
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![]() SI7302DN-T1-GE3 |
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![]() MOSFET N-CH 220V PWRPAK 1212-8 |
![]() Data Sheet |
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![]() |
![]() Si7308DN |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() SI7308DN-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 60V 6.0A 19.8W |
![]() Data Sheet |
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![]() SI7308DN-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 60V 6.0A 19.8W 58mohm @ 10V |
![]() Data Sheet |
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![]() |
![]() Si7309DN |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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(China (Mainland))










