Product Summary

The SI7336DP-T1 is an N-Channel 30-V (D-S) MOSFET. Applications are (1)Low-Side DC/DC Conversion : Notebook; Server; Workstation; (2)Synchronous Rectifier, POL.

Parametrics

SI7336DP-T1 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current (TJ = 150℃)a TA = 25℃: 18 A; (4)Continuous Drain Current (TJ = 150℃)a TA = 70℃: 15A; (5)Pulsed Drain Current (10 s Pulse Width)IDM: 70 A; (6)Continuous Source Current (Diode Conduction)a IS: 1.8 A; (7)Avalanche Current L = 1.0 mH IAS: 50 A; (8)Maximum Power Dissipationa TA = 25℃ PD: 1.9 W; (9)Maximum Power Dissipationa TA = 70℃: 1.2 W; (10)Operating Junction and Storage Temperature Range: -55 to 150 ℃.

Features

SI7336DP-T1 features: (1)Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology; (2)Qg Optimized; (3)New Low Thermal Resistance PowerPAK Package with Low 1.07-mm Profile; (4)100% Rg Tested.

Diagrams

SI7336DP-T1 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI7336DP-T1
SI7336DP-T1

Vishay/Siliconix

MOSFET 30V 30A 5.4W 3.25mohm @ 10V

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI7302DN-T1-E3
SI7302DN-T1-E3


MOSFET N-CH 220V PWRPAK 1212-8

Data Sheet

0-3000: $0.76
SI7302DN-T1-GE3
SI7302DN-T1-GE3


MOSFET N-CH 220V PWRPAK 1212-8

Data Sheet

0-3000: $0.76
Si7308DN
Si7308DN

Other


Data Sheet

Negotiable 
SI7308DN-T1-E3
SI7308DN-T1-E3

Vishay/Siliconix

MOSFET 60V 6.0A 19.8W

Data Sheet

0-1: $0.77
1-10: $0.61
10-100: $0.55
100-250: $0.47
SI7308DN-T1-GE3
SI7308DN-T1-GE3

Vishay/Siliconix

MOSFET 60V 6.0A 19.8W 58mohm @ 10V

Data Sheet

0-1: $0.77
1-10: $0.58
10-100: $0.54
100-250: $0.47
Si7309DN
Si7309DN

Other


Data Sheet

Negotiable