(China (Mainland))
Product Summary
The NDS9952A dual N- and P-channel enhancement mode power field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. The NDS9952A is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parametrics
NDS9952A absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ± 20 V; (3)ID Drain Current - Continuous: ± 3.7 ± 2.9 A, Pulsed: ± 15 ± 10A; (4)PD Power Dissipation for Dual Operation: 2 W; (5)Power Dissipation for Single Operation: 1.6W, 1W, 0.9W; (6)TJ,TSTG Operating and Storage Temperature Range: -55 to 150 °C.
Features
NDS9952A features: (1)N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V.; (2)P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.; (3)High density cell design or extremely low RDS(ON).; (4)High power and current handling capability in a widely used surface mount package; (5)Dual (N & P-Channel)MOSFET in surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 NDS9952A |
Fairchild Semiconductor |
MOSFET SO-8 N&P-CH ENHANCE |
Data Sheet |
Negotiable |
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NDS9952A_Q |
Fairchild Semiconductor |
MOSFET SO-8 N&P-CH ENHANCE |
Data Sheet |
Negotiable |
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