NCN4555MNR2G

NCN4555MNR2G, microcontroller or MPU, 6 V, 5 mA, 7 kV, 5 MHz, QFN

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Price:: US $0.56~0.56 / piece [Get Latest Price]

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1 ~ 20000 :	0.56 / Piece

PartNumber:: NCN4555MNR2G

Brand:: ON Semiconductor - ON | Pack: QFN | D/C: 11+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

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Products Upload time: 2013-06-28

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Part Number:NCN4555MNR2G
US $0.56 - 0.56
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piece

Product Summary

The NCN4555MNR2G is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller or MPU. A built−in LDO−type DC−DC converter makes the NCN4555MNR2G useable to drive 1.8 V and 3.0 V SIM card. The device fulfills the ISO7816−3 smart card interface standard as well as GSM 11.11 and related (11.12 and 11.18) and 3G mobile requirements (IMT−2000/3G TS 31.101). The NCN4555MNR2G typical applications are (1)SIM Card Interface Circuit for 2G, 2.5G and 3G Mobile Phones; (2)Identification Module; (3)Smart Card Readers; (4)Wireless PC Cards.

Parametrics

NCN4555MNR2G absolute maximum ratings: (1)LDO Power Supply Voltage: −0.5 ≤ VBAT ≤ 6 V; (2)Power Supply from Microcontroller Side: −0.5 ≤ VDD ≤ 6 V; (3)External Card Power Supply: −0.5 ≤ SIM_VCC ≤ 6 V; (4)Operating Ambient Temperature Range: −25 to +85 °C; (5)Operating Junction Temperature Range: −25 to +125 °C; (6)Maximum Junction Temperature: +125 °C; (7)Storage Temperature Range: −65 to + 150 °C; (8)Digital Input Pins: ±5 mA.

Features

NCN4555MNR2G features: (1)The LDO is able to Supply More than 50 mA under 1.8 V and 3.0 V; (2)Built−in Pullup Resistor for I/O Pin in Both Directions; (3)All Pins are Fully ESD Protected According to ISO−7816 Specifications – ESD Protection on SIM Pins in Excess of 7 kV (Human Body Model); (4)Supports up to More than 5 MHz Clock; (5)Low−Profile 3x3 QFN−16 Package; (6)Pb−Free Packages are Available.