IR2302STR

IR2302STR, power MOSFET and IGBT driver, 625V, 1.0W, SOP

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Price:: US $0.60~0.60 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	0.60 / Piece

PartNumber:: IR2302STR

Brand:: International Rectifier - IR | Pack: SOP | D/C: 05+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-24

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Part Number:IR2302STR
US $0.60 - 0.60
Quantity:

piece

Product Summary

The IR2302STR is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input of the IR2302STR is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The IR2302STR features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Parametrics

IR2302STR absolute maximum ratings: (1)VB High side floating absolute voltage: -0.3 to 625V; (2)VS High side floating supply offset voltage: VB - 25 to VB + 0.3V; (3)VHO High side floating output voltage VS: - 0.3 VB + 0.3V; (4)VCC Low side and logic fixed supply voltage: -0.3 to 25V; (5)VLO Low side output voltage: -0.3 to VCC + 0.3V; (6)VIN Logic input voltage (IN & SD)COM: - 0.3 to VCC + 0.3V; (7)dVS/dt Allowable offset supply voltage transient: 50 V/ns; (8)PD Package power dissipation @ TA ≤ +25°C (8 Lead PDIP): 1.0W, (8 Lead SOIC): 0.625W; (9)TJ Junction temperature: 150°C; (10)TS Storage temperature: -50 to 150°C; (11)TL Lead temperature (soldering, 10 seconds): 300°C.

Features

IR2302STR features: (1)Gate drive supply range from 5 to 20V; (2)Undervoltage lockout for both channels; (3)3.3V, 5V and 15V input logic compatible; (4)Cross-conduction prevention logic; (5)Matched propagation delay for both channels; (6)High side output in phase with IN input; (7)Logic and power ground +/- 5V offset.; (8)Internal 540ns dead-time; (9)Lower di/dt gate driver for better noise immunity; (10)Shut down input turns off both channels; (11)8-Lead SOIC also available LEAD-FREE (PbF).