IR20153STR

IR20153STR, power MOSFET driver, 170V, 400 uA, 11μs, SOP

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Price:: US $1.00~1.00 / piece [Get Latest Price]

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1 ~ 100000 :	1.00 / Piece

PartNumber:: IR20153STR

Brand:: International Rectifier - IR | Pack: SOP | D/C: 06+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-24

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Part Number:IR20153STR
US $1.00 - 1.00
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Product Summary

The IR20153STR is a high voltage, high speed power MOSFET driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS output down to 3.3V. The IR20153STR features a high pulse current buffer stage designed for minimum cross-conduction. The IR20153STR can be used to drive an N-channel power MOSFET in the high or low side configuration which operates up to 150 volts.

Parametrics

IR20153STR absolute maximum ratings: (1)VB High side driver output stage voltage: -5.0 to 170V; (2)VS High side floating supply offset voltage: - 8.0 to 150V; (3)VHO Output voltage gate high connection: VS- 0.3 to VB + 0.3V; (4)VCC Low side fixed supply voltage: -0.3 to 25V; (5)VIN Input voltage (IN and RESET): -0.3 to VCC +0.3V; (6)dV/dt Allowable offset voltage slew rate: 50 V/nsec; (7)TJ Junction temperature: -55 to 150°C; (8)TS Storage temperature: -55 to 150°C; (9)TL Lead temperature (soldering, 10 seconds): 300°C; (10)IQCC VCC supply current: 400 uA.

Features

IR20153STR features: (1)Floating channel designed for bootstrap operation; (2)Fully operational up to 150V; (3)Tolerant to negative transient voltage, dV/dt immune; (4)Gate drive supply range from 5V to 20V; (5)Undervoltage lockout; (6)Internal recharge FET for bootstrap refresh; (7)Internal deadtime of 11μs and 0.8μs; (8)CMOS Schmitt-triggered input logic; (9)Output out of phase with input; (10)Reset input; (11)Split pull-up and pull-down gate drive pins; (12)Also available LEAD-FREE (PbF).