Product Summary
The IR2011STRPBF is a high power, high speed power MOSFET driver with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs of the IR2011STRPBF are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The IR2011STRPBF features a high pulse current buffer stage designed for minimum driver cross-conduction. Applications are (1)Audio Class D amplifiers; (2)High power DC-DC SMPS converters; (3)Other high frequency applications.
Parametrics
IR2011STRPBF absolute maximum ratings: (1)VB High side floating supply voltage: -0.3 to 250V; (2)VS High side floating supply offset voltage: VB - 25 to VB + 0.3V; (3)VHO High side floating output voltage: VS - 0.3 to VB + 0.3V; (4)VCC Low side fixed supply voltage: -0.3 to 25V; (5)VLO Low side output voltage: -0.3 to VCC +0.3V; (6)VIN Logic input voltage (HIN & LIN)COM: -0.3 VCC +0.3V; (7)dVs/dt Allowable offset supply voltage transient: 50 V/ns; (8)PD Package power dissipation @ TA ≤ +25°C (8-lead DIP): 1.0W, (8-lead SOIC): 0.625W; (9)TJ Junction temperature: 150°C; (10)TS Storage temperature: -55 to 150°C; (11)TL Lead temperature (soldering, 10 seconds): 300°C.
Features
IR2011STRPBF features: (1)Gate drive supply range from 10V to 20V; (2)Independent low and high side channels; (3)Input logicHIN/LIN active high; (4)Undervoltage lockout for both channels; (5)3.3V and 5V input logic compatible; (6)CMOS Schmitt-triggered inputs with pull-down; (7)Matched propagation delay for both channels; (8)8-Lead SOIC is also available LEAD-FREE (PbF).
Diagrams

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(China (Mainland))











