(China (Mainland))
Product Summary
The FDZ206P is a P-Channel 2.5V specified powertrench BGA MOSFET. Combining Fairchilds advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the FDZ206P to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on). Applications are (1)Battery management; (2)Load switch; (3)Battery protection.
Parametrics
FDZ206P absolute maximum ratings: (1)VDSS Drain-Source Voltage: 20 V; (2)VGS Gate-Source Voltage: ±12 V; (3)ID Drain Current – Continuous: –13 A, Pulsed –60A; (4)PD Power Dissipation (Steady State): 2.2 W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: –55 to +150 °C.
Features
FDZ206P features: (1)–13 A, –20 V. rDS(on)= 9.5 mW @ VGS = –4.5 V, rDS(on)= 14.5 mW @ VGS = –2.5 V; (2)Occupies only 14 mm2 of PCB area, Only 42% of the area of SO-8; (3)Ultra-thin package: less than 0.80 mm height when mounted to PCB; (4)0.65 mm ball pitch; (5)3.5 x 4 mm2 footprint; (6)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 FDZ206P_Q |
Fairchild Semiconductor |
MOSFET 20V/12V PCh MOSFET |
Data Sheet |
Negotiable |
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FDZ206P |
Fairchild Semiconductor |
MOSFET 20V/12V PCh MOSFET |
Data Sheet |
Negotiable |
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