Product Summary

The BD435 is a plastic, medium-power silicon NPN transistor. The device is suitable for amplifier and switching applications.

Parametrics

BD435 absolute maximum ratings: (1)collector-emitter voltage, VCEO: 32Vdc; (2)collector-base voltage, VCBO: 32Vdc; (3)emitter-base voltage, VEBO: 5.0Vdc; (4)collector current, IC: 4.0Adc; (5)base current, IB: 1.0Adc; (6)total device dissopation @ Tc=25℃, PD: 36Watts; 288W/℃ when derate above 25℃; (7)operating and storage junction temperature range, TJ, Tstg: -55 to 150℃.

Features

BD435 features: (1)Pb-Free Package is Available.

Diagrams

BD435 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BD435STU
BD435STU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Epitaxial Sil
Data Sheet
0-1: $0.27
1-25: $0.23
25-100: $0.21
100-250: $0.14
BD435S
BD435S
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Epitaxial Sil
Data Sheet
0-1: $0.30
1-25: $0.20
25-100: $0.17
100-250: $0.15
BD435G
BD435G
ON Semiconductor
Transistors Bipolar (BJT) BIP NPN 4A 22V
Data Sheet
0-1: $0.38
1-25: $0.29
25-100: $0.26
100-500: $0.19
BD435
BD435
STMicroelectronics
Transistors Bipolar (BJT) NPN Medium Power
Data Sheet
0-1: $0.24
1-10: $0.22
10-100: $0.19
100-250: $0.18