(China (Mainland))
Product Summary
The BC639-16 is an NPN medium power transistor. The BC639-16 in a TO-92; SOT54 plastic package.
Parametrics
BC639-16 absolute maximum ratings: (1)VCEO collector-emitter voltage: 80 V; (2)VCBO collector-base voltage: 100 V; (3)VEBO emitter-base voltage open collector: 5 V; (4)IC collector current (DC): 1 A; (5)ICM peak collector current: 1.5 A; (6)IBM peak base current: 200 mA; (7)Ptot total power dissipation Tamb £ 25 °C: 0.83 W; (8)Tstg storage temperature: -65 +150 °C; (9)Tj junction temperature: 150 °C; (10)Tamb operating ambient temperature: -65 +150 °C.
Features
BC639-16 features: (1)High current (max. 1 A); (2)Low voltage (max. 80 V).
Diagrams
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 BC639-16 |
Other |
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Data Sheet |
Negotiable |
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BC639-16ZL1 |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 80V NPN |
Data Sheet |
Negotiable |
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BC639-16ZL1G |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 80V NPN |
Data Sheet |
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