(China (Mainland))
Product Summary
The 2sk3078 is a silicon n channel mos type field effect transistor.
Parametrics
2sk3078 absolute maximum ratings: (1)Drain-Source Voltage VDSS: 10 V; (2)Gate-Source Voltage VGSs: 5 V; (3)Drain Current ID: 0.5 A; (4)Power Dissipation PD*: 3.0 W; (5)Channel Temperature Tch : 150 °C; (6)Storage Temperature Range Tstg: 45~150 °C.
Features
2sk3078 features: (1)Output Power : PO = 27.0 dBmW (Min.); (2)Gain : GP = 12.5 dB (Min.); (3)Drain Efficiency : ηD = 46% (Typ.).
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SK3078A |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2SK3001 |
Other |
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Data Sheet |
Negotiable |
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2SK3009 |
Other |
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Data Sheet |
Negotiable |
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2SK3012 |
Other |
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Data Sheet |
Negotiable |
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2SK3013 |
Other |
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Data Sheet |
Negotiable |
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2SK3017 |
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MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
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2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
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