(China (Mainland))
Product Summary
The 2SJ449 is a P-Channel MOS Field Effect Transistor designed for high voltage switching applications.
Parametrics
2SJ449 absolute maximum ratings: (1)Drain to Source Voltage: –250 V; (2)Gate to Source Voltage: ±30 V; (3)Drain Current (DC): ±6.0 A; (4)Drain Current (pulse): ±24 A; (5)Total Power Dissipation (Tc = 25 °C): 35 W; (6)Total Power Dissipation (TA = 25 °C): 2.0 W; (7)Channel Temperature: 150 °C; (8)Storage Temperature: –55 to +150 °C; (9)Single Avalanche Current: –6.0 A; (10)Single Avalanche Energy: 180 mJ.
Features
2SJ449 features: (1)Low On-Resistance RDS(on)= 0.8 W MAX. (@ VGS = –10 V, ID = –3.0 A); (2)Low Ciss Ciss = 1040 pF TYP; (3)High Avalanche Capability Ratings; (4)Isolated TO-220 Package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 2SJ449 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||
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2SJ400 |
Other |
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Data Sheet |
Negotiable |
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2SJ401 |
Other |
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Data Sheet |
Negotiable |
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2SJ401(Q) |
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MOSFET P-CH 60V 20A TO-220FL |
Data Sheet |
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2SJ401(TE24L,Q) |
Toshiba |
MOSFET MOSFET P-Ch 60V 20A Rdson=0.045Ohm |
Data Sheet |
Negotiable |
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2SJ402(Q) |
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MOSFET P-CH 60V 30A TO-220FL |
Data Sheet |
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2SJ403 |
Other |
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Data Sheet |
Negotiable |
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