Product Summary
The 1n5820rlg is a schottky barrier rectifier. The 1n5820rlg employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Parametrics
1n5820rlg absolute maximum ratings: (1)Peak Repetitive Reverse Voltage, Working Peak Reverse Voltage, DC Blocking Voltage: 20 V; (2)Non−Repetitive Peak Reverse Voltage VRSM: 24 V; (3)RMS Reverse Voltage VR(RMS): 14 V; (4)Average Rectified Forward Current (Note 1)VR(equiv) 0.2 VR(dc), TL = 95°C (RJA = 28°C/W, P.C. Board Mounting, see Note 5)IO: 3.0 A; (5)Ambient Temperature Rated VR(dc), PF(AV)= 0 RJA = 28°C/W TA: 90 °C; (6)Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C)IFSM: 80 (for one cycle)A; (7)Operating and Storage Junction Temperature Range (Reverse Voltage applied)TJ, Tstg: -65 to +125 °C.
Features
1n5820rlg features: (1)Extremely Low VF; (2)Low Power Loss/High Efficiency; (3)Low Stored Charge, Majority Carrier Conduction; (4)Shipped in plastic bags, 500 per bag; (5)Available in Tape and Reel, 1500 per reel, by adding a RL suffix to the part number; (6)Pb−Free Packages are Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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1N5820RLG |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 20V |
Data Sheet |
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