(China (Mainland))
Product Summary
The vec2602-tl-e is an N-Channel Silicon MOSFET.
Parametrics
vec2602-tl-e absolute maximum ratings: (1)drain-to-source voltage vdss: 30 v; (2)gate-to-source voltage vgss±20 v; (3)drain current (dc)id: 4 a; (4)drain current (pulse)idp pw£10ms, duty cycle£1%: 16 a; (5)allowable power dissipation pd: 0.9 w; (6)total dissipation pt: 1.0 w; (7)channel temperature tch: 150 °c; (8)storage temperature tstg: --55 to +150 °c.
Features
vec2602-tl-e features: (1)Best suited for inverter applications.; (2)The VEC2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.; (3)4V drive.; (4)Mounting height 0.75mm.
Diagrams
