TPC6107

tpc6107, Silicon P Channel MOS Type Transistor, 20 V, 18 A, 2.2 W, DIP

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Price:: US $0.24~0.24 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 3000 :	0.24 / Piece

PartNumber:: TPC6107

Brand:: Toshiba Semiconductor - Toshiba | D/C: 09+

Availability:: Supply Ability: 3000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-08-22

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Part Number:TPC6107
US $0.24 - 0.24
Quantity:

piece

Product Summary

The tpc6107 is a Silicon P Channel MOS Type Transistor. Applications are (1)Notebook PC Applications; (2)Portable Equipment Applications.

Parametrics

tpc6107 absolute maximum ratings: (1)Drain-source voltage VDSS: 20 V; (2)Drain-gate voltage (RGS = 20 kΩ)VDGR: 20 V; (3)Gate-source voltage VGSS: ±12 V; (4)Drain current Pulse (Note 1)IDP: -18 A; (5)Drain power dissipation (t = 5 s)(Note 2a)PD: 2.2 W; (6)Drain power dissipation (t = 5 s)(Note 2b)PD: 0.7 W; (7)Single pulse avalanche energy (Note 3)EAS: 1.3 mJ; (8)Avalanche current IAR: -2.25 A; (9)Repetitive avalanche energy (Note 4)EAR: 0.22 mJ; (10)Channel temperature Tch: 150 °C; (11)Storage temperature range Tstg: -55 to 150 °C.

Features

tpc6107 features: (1)Small footprint due to small and thin package; (2)Low drain-source ON resistance: RDS (ON)= 40 mΩ (typ.); (3)High forward transfer admittance: |Yfs| = 9.6 S (typ.); (4)Low leakage current: IDSS = -10 μA (max)(VDS =-20 V); (5)Enhancement model: Vth = -0.5 to -1.2 V (VDS = −10 V, ID = -200 μA.