STN1NK60Z

stn1nk60z, Protected SuperMESH MOSFET, 600 V, 3.2 A, 25 W, SOT-223

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Price:: US $0.28~0.28 / piece [Get Latest Price]

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1 ~ 765 :	0.28 / Piece

PartNumber:: STN1NK60Z

Brand:: STMicroelectronics - ST | D/C: 09+

Availability:: Supply Ability: 765/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-09-11

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Part Number:STN1NK60Z
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Product Summary

The stn1nk60z is a Protected SuperMESH MOSFET. The stn1nk60z is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Applications are (1)AC adaptors and battery chargers; (2)swith mode power supplies (SMPS).

Parametrics

stn1nk60z absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 600 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 600 V; (3)VGS Gate- source Voltage: 30 V; (4)ID Drain Current (continuous)at TC = 25°C: 0.8 A; (5)ID Drain Current (continuous)at TC = 100°C: 0.5 A; (6)IDM Drain Current (pulsed): 3.2 A; (7)PTOT Total Dissipation at TC = 25°C: 25 W; (8)VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ): 800 V; (9)TjTstg Operating Junction Temperature,Storage Temperature: -55 to 150 °C.

Features

stn1nk60z features: (1)typical RDS(on)= 13Ω; (2)extremely high dv/dt capability; (3)ESD improved capability; (4)100% avalanche tested; (5)new high voltage benchmark; (6)gate charge minimized description.