STD1NK60T4

STD1NK60T4, MOSFET, 600 V, 4 A, 8 Ω, DPAK

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Price:: US $0.13~0.13 / piece [Get Latest Price]

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1 ~ 2500 :	0.13 / Piece

PartNumber:: STD1NK60T4

Brand:: STMicroelectronics - ST | D/C: 04+

Availability:: Supply Ability: 25000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-08-02

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Part Number:STD1NK60T4
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Product Summary

The STD1NK60T4 is a MOSFET. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The STD1NK60T4 complements ST full range of high voltage MOSFET including revolutionary MDmesh product. Applications are (1)Low power battery chargers; (2)Swith mode low power supplies(SMPS); (3)Low power, ballast, CFL (compact fluorescent lamps).

Parametrics

STD1NK60T4 absolute maximum ratings: (1)VDS, drain-source voltage (VGS = 0): 600 V; (2)VDGR, drain-gate voltage (RGS = 20 kΩ): 600 V; (3)VGS, gate- source voltage: ± 30 V; (4)ID, drain current (continuous)at TC = 25°C: 1.0 A; (5)ID, drain current (continuous)at TC = 100°C: 0.63 A; (6)IDM, drain current (pulsed): 4 A; (7)PTOT, total dissipation at TC = 25°C: 30 W; (8)Derating factor: 0.24 W/°C; (9)dv/dt (1), peak diode recovery voltage slope: 3 V/ns; (10)Tj, operating junction temperature: -55 to 150 °C; (11)Tstg, storage temperature: -55 to 150 °C.

Features

STD1NK60T4 features: (1)Typical RDS(on)= 8 Ω; (2)Extremely high dv/dt capability; (3)ESD improved capability; (4)100% avalanche tested; (5)New high voltage benchmark; (6)Gate charge minimized.