Product Summary
The si4830ady-t1-e3 is a dual N-channel 30-V (D-S) MOSFET. It is ideal for Asymmetrical Buck-Boost DC/DC Converter.
Parametrics
si4830ady-t1-e3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ± 20V; (3)Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID: 7.5A; (4)Pulsed Drain Current IDM: 30A; (5)Continuous Source Current (Diode Conduction)a IS: 1.7A; (6)Maximum Power Dissipationa TA = 25 °C PD: 2.0 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 °C.
Features
si4830ady-t1-e3 features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)LITTLE FOOT Plus Schottky; (3)Si4830DY Pin Compatible; (4)PWM Optimized; (5)100 % Rg Tested; (6)Compliant to RoHS Directive 2002/95/EC.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI4830ADY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 7.5A 2W |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
Si4800 |
Other |
Data Sheet |
Negotiable |
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SI4800BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
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SI4800BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
Data Sheet |
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SI4800DY |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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SI4800DY-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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SI4800DY-T1 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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