SI4435DDY-T1-GE3

si4435ddy-t1-ge3, P-Channel Logic Level MOSFET, 2.5 W, 20 V, -6.3 A, dip

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Price:: US $0.14~0.14 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 55000 :	0.14 / Piece

PartNumber:: SI4435DDY-T1-GE3

Brand:: Vishay General Semiconductor - Vishay | D/C: 11+

Availability:: Supply Ability: 55000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-08-12

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Part Number:SI4435DDY-T1-GE3
US $0.14 - 0.14
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piece

Product Summary

The si4435ddy-t1-ge3 is a P-Channel Logic Level MOSFET for produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. It is ideal for: (1)DC/DC converter; (2)Load switch; (3)Motor Drive.

Parametrics

si4435ddy-t1-ge3 absolute maximum ratings: (1)VDSS Drain-Source Voltage: –30 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Drain Current – Continuous (Note 1a): -6.3 A; (4)Power Dissipation for Single Operation (Note 1a): 2.5 W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150 °C.

Features

si4435ddy-t1-ge3 features: (1)–6.3 A, –30 V. RDS(ON)= 0.032 @ VGS = -10 V RDS(ON); (2)Low gate charge; (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.