SI3443BDV-T1-E3

P-channel MOSFET, 6-TSOP, -20 V, Surface Mount, si3443bdv-t1-e3

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Price:: US $0.08~0.08 / piece [Get Latest Price]

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PartNumber:: SI3443BDV-T1-E3

Brand:: Vishay General Semiconductor - Vishay | D/C: 06+

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Products Upload time: 2013-07-22

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Part Number:SI3443BDV-T1-E3
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Product Summary

The P-channel MOSFET si3443bdv-t1-e3 from International Rectifier utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package of the si3443bdv-t1-e3 with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23.

Parametrics

si3443bdv-t1-e3 absolute maximum ratings:(1)VDS, Drain- Source Voltage: -20 V ; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ -4.5V: -4.4 A; (3)ID @ TA= 70℃, Continuous Drain Current, VGS @ -4.5V: -3.5 A; (4)IDM, Pulsed Drain Current: -20A; (5)PD @TA = 25℃, Power Dissipation: 2.0 w; (6)PD @TA = 70℃, Power Dissipation: 1.3w; (7)Linear Derating Factor: 0.016 W/℃; (8)EAS, Single Pulse Avalanche Energy: 31 mJ; (9)VGS, Gate-to-Source Voltage: ± 12 V; (10)TJ, TSTG, Junction and Storage Temperature Range: -55 to + 150 ℃.

Features

si3443bdv-t1-e3 features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Surface Mount; (4)Available in Tape & Reel; (5)-2.5V Rated; (6)Lead-Free.