(China (Mainland))
Product Summary
The ntmd6p02r2g is a Power MOSFET. The is suit for Power Management in Portable and Battery–Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards.
Parametrics
ntmd6p02r2g absolute maximum ratings: (1)Drain–to–Source Voltage VDSS: 20 V; (2)Gate–to–Source Voltage – Continuous VGS: 12 V; (3)Total Power Dissipation @ TA = 25°C: 2W; (4)Continuous Drain Current @ TA = 25°C: 7.8W; (5)Continuous Drain Current @ TA = 70°C: 5.7W; (6)Maximum Operating Power Dissipation: 0.5W; (7)Maximum Operating Drain Current: 3.89A; (8)Pulsed Drain Current (Note 4.): 40A.
Features
ntmd6p02r2g features: (1)Higher Efficiency Extending Battery Life; (2)Logic Level Gate Drive; (3)Miniature Dual SO–8 Surface Mount Package; (4)Diode Exhibits High Speed, Soft Recovery; (5)Avalanche Energy Specified; (6)SO–8 Mounting Information Provided.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 NTMD6P02R2G |
ON Semiconductor |
MOSFET 20V 6A P-Channel |
Data Sheet |
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Pricing (USD) |
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Data Sheet |
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