Product Summary
The irlr120ntrpbf is a hexfet power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Parametrics
irlr120ntrpbf absolute maximum ratings: (1)continuous drain current, vgs @ 10v: 10 A; (2)continuous drain current, vgs @ 10v: 7.0 a; (3)idm pulsed drain current: 35 A; (4)pd @tc = 25°c power dissipation: 48 w; (5)linear derating factor: 0.32 w/°c; (6)vgs gate-to-source voltage: 16 v; (7)eas single pulse avalanche energy: 85 mj; (8)iar avalanche current: 6.0 a; (9)ear repetitive avalanche energy: 4.8 mj; (10)dv/dt peak diode recovery dv/dt: 5.0 v/ns; (11)tj operating junction and tstg storage temperature range: -55 to + 175°C; (12)soldering temperature, for 10 seconds: 300°C.
Features
irlr120ntrpbf features: (1)Surface Mount (IRLR120N); (2)Straight Lead (IRLU120N); (3)Advanced Process Technology; (4)Fast Switching; (5)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRLR120NTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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