(China (Mainland))
Product Summary
The irlml6401pbf is a P-Channel MOSFET from International Rectifier utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the irlml6401pbf is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
Parametrics
irlml6401pbf absolute maximum ratings: (1)VDS, Drain- Source Voltage: -12 V; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ -4.5V: -4.3A; (3)ID @ TA= 70℃, Continuous Drain Current, VGS @ -4.5V: -3.4 A; (4)IDM, Pulsed Drain Current: -34A; (5)PD @TA = 25℃, Power Dissipation: 1.3W; (6)PD @TA = 70℃, Power Dissipation: 0.8W; (7)Linear Derating Factor: 0.01 W/℃; (8)EAS, Single Pulse Avalanche Energy: 33 mJ; (9)VGS, Gate-to-Source Voltage: ± 8.0 V; (10)TJ, TSTG, Junction and Storage Temperature Range: -55 to + 150℃.
Features
irlml6401pbf features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching; (7)1.8V Gate Rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 IRLML6401PbF |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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IRLM110A |
Other |
|
Data Sheet |
Negotiable |
|
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 |
IRLM110ATF |
Fairchild Semiconductor |
MOSFET 100V N-Channel a-FET Logic Level |
Data Sheet |
Negotiable |
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IRLM120A |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRLM120ATF |
Fairchild Semiconductor |
MOSFET 100V N-Channel a-FET Logic Level |
Data Sheet |
Negotiable |
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IRLM210A |
Other |
|
Data Sheet |
Negotiable |
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IRLM210ATF |
Fairchild Semiconductor |
MOSFET 200V N-Channel a-FET Logic Level |
Data Sheet |
Negotiable |
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