Product Summary
The irfi740g is a Power MOSFET. Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fu/lpak is mounted to a heatsink using a single clip or by a single screw fixing.
Parametrics
irfi740g absolute maximum ratings: (1)Continuous Drain Current: 5.4 A; (2)Pulsed Drain Current: 22 A; (3)Power Dissipation: 40 W; (4)Linear Derating Factor: 0.32 W/℃; (5)Gate-to-Source Voltage: ±20 V; (6)Single Pulse Avalanche Energy: 390 mJ; (7)Avaianche Current: 5.4 A; (8)Operating Junction and Storage Temperature Range: -55 to +150 ℃.
Features
irfi740g features: (1)Isolated Package; (2)High Voltage lsolatione 2.5KVRMS ; (3)Sink to Lead Creepage Dist.= 4.8mm; (4)Dynamic dv/dt Rating; (5)Low Thermal Resistance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFI740G |
Vishay/Siliconix |
MOSFET N-Chan 400V 5.4 Amp |
Data Sheet |
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IRFI740G, SiHFI740G |
Other |
Data Sheet |
Negotiable |
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IRFI740GPBF |
Vishay/Siliconix |
MOSFET N-Chan 400V 5.4 Amp |
Data Sheet |
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IRFI740GLCPBF |
Vishay/Siliconix |
MOSFET N-Chan 400V 5.7 Amp |
Data Sheet |
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IRFI740GLC |
Vishay/Siliconix |
MOSFET N-Chan 400V 5.7 Amp |
Data Sheet |
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