Product Summary

The P20NM60 is a FDmesh power MOSFET. The P20NM60 associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. The P20NM60 is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Application is switching application.

Parametrics

CA1212 absolute maximum ratings: (1)Drain-source voltage (VGS = 0): 600 V; (2)Drain-gate voltage (RGS = 20 kΩ): 600 V; (3)Gate- source voltage: ± 30 V; (4)Drain current (continuous)at TC = 25°C: 20 A; (5)Drain current (continuous)at TC = 100°C: 12.6 A; (6)Drain current (pulsed): 80 A; (7)Total dissipation at TC = 25°C: 45 W; (8)Derating factor: 0.36 W/°C; (9)Peak diode recovery voltage slope: 20 V/ns; (10)Insulation withstand voltage (DC): 2500 V; (11)Operating junction temperature: -65 to 150 °C; (12)Storage temperature: -65 to 150 °C.

Features

CA1212 features: (1)VDSS: 600 V; (2)RDS(on): <0.29 Ω; (3)ID: 20 A; (4)Pw: 192 W; (5)High dv/dt and avalanche capabilities; (6)100% Avalanche tested; (7)Low input capacitance and gate charge; (8)Low gate input resistancE; (9)Tight process control and high manufacturing yields.

Diagrams

CA1212 pin connection