IRF7507TRPBF

irf7507trpbf, Fifth Generation HEXFET, 20 V, 1.25 W, 1.9A, SOP

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Price:: US $0.23~0.23 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 4000 :	0.23 / Piece

PartNumber:: IRF7507TRPBF

Brand:: International Rectifier - IR | D/C: 07+

Availability:: Supply Ability: 4000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-08-22

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Part Number:IRF7507TRPBF
US $0.23 - 0.23
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piece

Product Summary

The irf7507trpbf is a Fifth Generation HEXFET from International Rectifier. The irf7507trpbf utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the irf7507trpbf an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the irf7507trpbf will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

Parametrics

irf7507trpbf absolute maximum ratings: (1)VDS Drain-Source Voltage: 20 V; (2)ID @ TA = 25°C Continuous Drain Current, VGS: 2.4A; (3)ID @ TA = 70°C Continuous Drain Current, VGS: 1.9A; (4)IDM Pulsed Drain Current: 19A; (5)PD @TA = 25°C Maximum Power Dissipation: 1.25 W; (6)PD @TA = 70°C Maximum Power Dissipation: 0.8 W; (7)Linear Derating Factor: 10 mW/°C; (8)VGS Gate-to-Source Voltage: ± 12 V; (9)VGSM Gate-to-Source Voltage Single Pulse tp<10μS: 16 V; (10)dv/dt Peak Diode Recovery dv/dt: 5.0V/ns; (11)TJ , TSTG Junction and Storage Temperature Range: -55 to + 150 °C.

Features

irf7507trpbf features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)DuaN and P ChanneMOSFET; (4)Very SmalSOIC Package; (5)Low Profile (<1.1mm); (6)Available in Tape & Reel; (7)Fast Switching.