(China (Mainland))
Product Summary
The irf7507tr is a Fifth Generation HEXFET from International Rectifier. The irf7507tr utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the irf7507tr an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the irf7507tr will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Parametrics
irf7507tr absolute maximum ratings: (1)VDS Drain-Source Voltage: 20 V; (2)ID @ TA = 25°C Continuous Drain Current, VGS: 2.4A; (3)ID @ TA = 70°C Continuous Drain Current, VGS: 1.9A; (4)IDM Pulsed Drain Current: 19A; (5)PD @TA = 25°C Maximum Power Dissipation: 1.25 W; (6)PD @TA = 70°C Maximum Power Dissipation: 0.8 W; (7)Linear Derating Factor: 10 mW/°C; (8)VGS Gate-to-Source Voltage: ± 12 V; (9)VGSM Gate-to-Source Voltage Single Pulse tp<10μS: 16 V; (10)dv/dt Peak Diode Recovery dv/dt: 5.0V/ns; (11)TJ , TSTG Junction and Storage Temperature Range: -55 to + 150 °C.
Features
irf7507tr features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)DuaN and P ChanneMOSFET; (4)Very SmalSOIC Package; (5)Low Profile (<1.1mm); (6)Available in Tape & Reel; (7)Fast Switching.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRF7507TR |
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MOSFET N+P 20V 1.7A MICRO8 |
Data Sheet |
Negotiable |
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IRF7507TRPBF |
International Rectifier |
MOSFET MOSFT DUAL N/PCh 20V 2.4A Micro 8 |
Data Sheet |
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