IRF7341PBF

irf7341pbf, Power MOSFET, 55V, 4.7A, International Rectifier

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Price:: US $0.31~0.31 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	0.31 / Piece

PartNumber:: IRF7341PBF

Brand:: International Rectifier - IR | D/C: 10+

Availability:: Supply Ability: 1000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-09-11

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Part Number:IRF7341PBF
US $0.31 - 0.31
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Product Summary

The irf7341pbf is a Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Parametrics

irf7341pbf absolute maximum ratings: (1)Drain- Source Voltage: 55 V; (2)Continuous Drain Current: 4.7 A; (3)Continuous Drain Current: 3.8 A; (4)Pulsed Drain Current: 38 A; (5)Power Dissipation: 2.0 W; (6)Linear Derating Factor: 0.016 W/℃; (7)Gate-to-Source Voltage: ± 20 V; (8)Gate-to-Source Voltage Single Pulse tp<10μs: 30 V; (9)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (10)Junction and Storage Temperature Range: -55 to + 150 ℃.

Features

irf7341pbf features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual N-Channel Mosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching; (8)Lead-Free.