(China (Mainland))
Product Summary
The ipd05n03la is an OptiMOS 2 Power-Transistor.
Parametrics
ipd05n03la absolute maximum ratings: (1)Continuous drain current I D T C=25 °C 2): 50 A; (2)Pulsed drain current I D,pulse T C=25 °C 3): 350 A; (3)Avalanche energy, single pulse E AS I D=45 A, R GS=25 Ω: 300 mJ; (4)Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max =175 °C: 6 kV/µs; (5)Gate source voltage 4)V GS: ±20 V; (6)Power dissipation P tot T C=25 °C: 94 W; (7)Operating and storage temperature T j , T stg: -55 to 175 °C.
Features
ipd05n03la features: (1)Ideal for high-frequency dc/dc converters; (2)Qualified according to JEDEC 1)for target application; (3)N-channel, logic level; (4)Excellent gate charge x R DS(on)product (FOM); (5)Superior thermal resistance; (6)175 °C operating temperature.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 IPD05N03LA |
Other |
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Data Sheet |
Negotiable |
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 |
IPD05N03LA G |
|
MOSFET N-CH 25V 50A DPAK |
Data Sheet |
Negotiable |
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IPD05N03LAG |
Infineon Technologies |
MOSFET N-Channel MOSFET 20-200V |
Data Sheet |
Negotiable |
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