Product Summary

The h7p0601ds90tl-e is a Silicon P Channel MOS FET High Speed Power Switching.



Parametrics

h7p0601ds90tl-e absolute maximum ratings: (1)drain to source voltage vdss: –60 v; (2)gate to source voltage vgss: ±20 v; (3)drain current id: –20 a; (4)drain peak current id (pulse)note1: –80 a; (5)body-drain diode reverse drain current idr: –20 a; (6)avalanche current iap note3: –12 a; (7)avalanche energy ear note3: 12.3 mj; (8)channel dissipation pch note2: 25 w; (9)channel temperature tch: 150 °c; (10)storage temperature tstg: –55 to +150 °c.

Features

h7p0601ds90tl-e features: (1)Low on-resistance RDS(on)= 40 mΩ typ.; (2)Low drive current; (3)4.5 V gate drive device can driven from 5 V source.

Diagrams

h7p0601ds90tl-e pin connection