FQD17P06TM

fqd17p06tm, p-channel mosfet, 25 v, 300 mj, 44 w, to

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Price:: US $0.20~0.20 / piece [Get Latest Price]

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1 ~ 600 :	0.20 / Piece

PartNumber:: FQD17P06TM

Brand:: Fairchild Semiconductor - Fairchild | D/C: 04+

Availability:: Supply Ability: 600/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-08-29

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Part Number:FQD17P06TM
US $0.20 - 0.20
Quantity:

piece

Product Summary

The fqd17p06tm is a P-Channel enhancement mode power field effect transistor planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Parametrics

fqd17p06tm absolute maximum ratings: (1)vdss drain-source voltage: -60 v; (2)id drain current - continuous (tc = 25°c): -12 a; - continuous (tc = 100°c): -7.6 a; (3)idm drain current - pulsed (note 1): -48 a; (4)vgss gate-source voltage: ± 25 v; (5)eas single pulsed avalanche energy (note 2): 300 mj; (6)iar avalanche current (note 1): -12 a; (7)ear repetitive avalanche energy (note 1): 4.4 mj; (8)dv/dt peak diode recovery dv/dt (note 3): -7.0 v/ns; (9)pd power dissipation (ta = 25°c)*: 2.5 w; (10)power dissipation (tc = 25°c): 44 w; - derate above 25°c: 0.35 w/°c; (11)tj, tstg operating and storage temperature range: -55 to +150 °c; (12)tl maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 °c.

Features

fqd17p06tm features: (1)-12A, -60V, RDS(on)= 0.135Ω @VGS = -10 V; (2)Low gate charge ( typical 21 nC); (3)Low Crss ( typical 80 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.