(China (Mainland))
Product Summary
The bul903edfp is a high voltage fast-switching npn power transistor. The bul903edfp is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The bul903edfp has been designed to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application. Application: four lamp electronic ballast for 120 V mains in push-pull configuration.
Parametrics
bul903edfp absolute maximum ratings: (1)VCES Collector-Emitter Voltage (VBE = 0): 900 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 400 V; (3)VEBO Emitter-Base Voltage (IC = 0): 7 V; (4)IC Collector Current: 5 A; (5)ICM Collector Peak Current (tp <5 ms): 8 A; (6)IB Base Current: 2 A; (7)IBM Base Peak Current (tp <5 ms): 4 A; (8)Ptot Total Dissipation at Tc = 25 °C: 35 W; (9)Visol Insulation Withstand Voltage (RMS)from All Three Leads to Exernal Heatsink: 1500 V; (10)Tstg Storage Temperature: -65 to 150 °C; (11)Tj Max. Operating Junction Temperature: 150°C.
Features
bul903edfp features: (1)integrated antisaturation and protection network; (2)integrated antiparallel collector emitter diode; (3)high voltage capability; (4)low spread of dynamic parameters; (5)minimum lot-to-lot spread for reliable operation; (6)very high switching speed; (7)arcing test self protected; (8)fully insulated package (u.l. compliant)for easy mounting.
Diagrams
