(China (Mainland))
Product Summary
The bsc119n03sg is a Power-Transistor.
Parametrics
bsc119n03sg absolute maximum ratings: (1)Pulsed drain current I D,pulse T C=25 °C: 120A; (2)Avalanche energy, single pulse EAS I D=30 A, RGS=25 Ω: 60 mJ; (3)Gate source voltage VGS: ±20 V; (4)Power dissipation Ptot T C=25 °C: 43 W; (5)Operating and storage temperature T j, T stg: -55 to 150 °C; (6)IEC climatic category; DIN IEC: 55/150/56°C.
Features
bsc119n03sg features: (1)Fast switching MOSFET for SMPS; (2)Optimized technology for notebook DC/DC converters; (3)Qualified according to JEDEC1)for target applications; (4)N-channel; (5)Logic level; (6)Excellent gate charge x RDS(on)product (FOM); (7)Very low on-resistance RDS(on); (8)Superior thermal resistance; (9)Avalanche rated; (10)Pb-free plating; RoHS compliant.
Diagrams
