(China (Mainland))
Product Summary
The SI4435DY-T1 is a P-Channel 30-V (D-S) MOSFET. The applications of it are Load Switches and Battery Switch.
Parametrics
SI4435DY-T1 absolute maximum ratings: (1)Drain-Source Voltage:-30V; (2)Gate-Source Voltage:±20V; (3)Continuous Drain Current (TJ = 150℃):TA=25℃:-7A; (4)Continuous Drain Current (TJ = 150℃):TA=70℃:-5.6A; (5)Pulsed Drain Current:-50A; (6)continuous Source Current (Diode Conduction):-1.25A; (7)Maximum Power Dissipation:TA=25℃:1.5W; (8)Maximum Power Dissipation:TA=70℃: 0.9W; (9)Operating Junction and Storage Temperature Range:-55℃ to 150℃.
Features
SI4435DY-T1 features: (1)TrenchFET Power MOSFET; (2)Advanced High Cell Density Process; (3)Lead (Pb)-Free Version is RoHS Compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4435DY-T1-A-E3 |
Vishay/Siliconix |
MOSFET 30V 8A 2.5W |
Data Sheet |
Negotiable |
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SI4435DY-T1-REVA |
Vishay/Siliconix |
MOSFET 30V 8A 2.5W |
Data Sheet |
Negotiable |
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