Product Summary
The PMK35EP is an Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The PMK35EP is designed and qualified for use in computing, communications, consumer and industrial applications only. Applications are (1)Battery management; (2)Load switching.
Parametrics
PMK35EP absolute maximum ratings: (1)VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C: 30 V; (2)ID drain current Tsp = 25 °C; VGS = -10 V: -14. 9 A; (3)Ptot total power dissipation Tsp = 25 °C: 6.9 W; (4)Static characteristics RDSon drain-source on-state resistance VGS = -10 V; ID = -9.2 A; Tj = 25 °C: 16 to 19 mΩ; (5)Dynamic characteristics QGD gate-drain charge VGS = -10 V; ID = -9.2 A; VDS = -15 V; Tj = 25 °C; see Figure 11: 6 nC.
Features
PMK35EP feature: Low conduction losses due to low on-state resistance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMK35EP,518 |
NXP Semiconductors |
MOSFET MOSFET P-CH FET 30V 14.9A |
Data Sheet |
|
|
|||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
PMK30EP,518 |
NXP Semiconductors |
MOSFET MOSFET P-CH FET 30V 14.9A |
Data Sheet |
|
|
|||||||||
PMK35EP,518 |
NXP Semiconductors |
MOSFET MOSFET P-CH FET 30V 14.9A |
Data Sheet |
|
|
|||||||||
PMK3B000 |
LIBRA/LEGEND MOUNTING PANEL |
Data Sheet |
|
|
||||||||||
PMK3C000 |
1/16 DIN MOUNTING PANEL |
Data Sheet |
|
|