Product Summary

The IRFD9210 is a power MOSFET. The efficient geometry and unique processing of the IRFD9210 design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Parametrics

IRFD9210 absolute maximum ratings: (1)Drain-Source voltage, VDS: - 200 V; (2)Gate-Source voltage, VGS: ± 20 V; (3)Continuous drain current, VGS at - 10 V, TC = 25 °C, ID: - 0.40 A; TC = 100 °C, ID: - 0.25 A; (4)Pulsed drain current, IDM: - 3.2 A; (5)Linear derating factor: 0.0083 W/°C; (6)Single pulse avalanche energy, EAS: 210 mJ; (7)Repetitive avalanche current, IAR: - 0.40 A; (8)Repetitive avalanche energy, EAR: 0.10 mJ; (9)Maximum power dissipation, TC = 25 °C, PD: 1.0 W; (10)Peak diode recovery dV/dt, dV/dt: - 5.0 V/ns; (11)Operating junction and storage temperature range, TJ, Tstg: - 55 to + 150 °C.

Features

IRFD9210 features: (1)Dynamic dV/dt rating; (2)Repetitive avalanche rated; (3)For automatic insertion; (4)End stackable; (5)P-Channel; (6)Fast switching; (7)Ease of paralleling; (8)Lead (Pb)-free available.

Diagrams

IRFD9210 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFD9210
IRFD9210

Vishay/Siliconix

MOSFET P-Chan 200V 0.4 Amp

Data Sheet

0-1800: $1.09
1800-2500: $1.02
2500-5000: $1.01
IRFD9210, SiHFD9210
IRFD9210, SiHFD9210

Other


Data Sheet

Negotiable 
IRFD9210PBF
IRFD9210PBF

Vishay Semiconductors

MOSFET P-Chan 200V 0.4 Amp

Data Sheet

0-1: $0.66
1-10: $0.61
10-100: $0.56
100-250: $0.51