(China (Mainland))
Product Summary
The IRF7807VTR is a kind of N Channel Application Specific MOSFET for DC-DC converters. The IRF7807VTR employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of the IRF7807VTR devices provide the best cost/performance solution for system voltages, such as 3.3V and 5V.
Parametrics
IRF7807VTR absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±12V; (3)Continuous Drain or Source 25℃ ID: 8.3A; (4)Current (VGS 3 4.5V) 70℃: 6.6A; (5) Pulsed Drain Current. IDM: 66A; (6)Power Dissipation 25℃ PD: 2.5W; 70℃: 1.6W; (7)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃; (8) Continuous Source Current (Body Diode). IS: 2.5A; (9) Pulsed source Current ISM: 66A.
Features
IRF7807VTR features: (1)N Channel Application Specific MOSFETs; (2)Ideal for Mobile DC-DC Converters; (3)Low Conduction Losses; (4)Low Switching Losses.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRF7807VTR |
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MOSFET N-CH 30V 8.3A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7807VTRPBF |
International Rectifier |
MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC |
Data Sheet |
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