Product Summary

The IRF7807VTR is a kind of N Channel Application Specific MOSFET for DC-DC converters. The IRF7807VTR employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of the IRF7807VTR devices provide the best cost/performance solution for system voltages, such as 3.3V and 5V.

Parametrics

IRF7807VTR absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±12V; (3)Continuous Drain or Source 25℃ ID: 8.3A; (4)Current (VGS 3 4.5V) 70℃: 6.6A; (5) Pulsed Drain Current. IDM: 66A; (6)Power Dissipation 25℃ PD: 2.5W; 70℃: 1.6W; (7)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃; (8) Continuous Source Current (Body Diode). IS: 2.5A; (9) Pulsed source Current ISM: 66A.

Features

IRF7807VTR features: (1)N Channel Application Specific MOSFETs; (2)Ideal for Mobile DC-DC Converters; (3)Low Conduction Losses; (4)Low Switching Losses.

Diagrams

IRF7807VTR circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7807VTR
IRF7807VTR


MOSFET N-CH 30V 8.3A 8-SOIC

Data Sheet

Negotiable 
IRF7807VTRPBF
IRF7807VTRPBF

International Rectifier

MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC

Data Sheet

0-1: $0.84
1-25: $0.49
25-100: $0.30
100-250: $0.28