(China (Mainland))
Product Summary
The BD436 is a silicon epitaxial-base NPN power transistor in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD436 is especially suitable for use in car-radio output stages. The complementary PNP type is BD436 respectively.
Parametrics
BD436 absolute maximum ratings: (1)Collector-base voltage (IE = 0): 32 V; (2)Collector-emitter voltage (VBE = 0): 32 V; (3)Collector-emitter voltage (IB = 0): 32 V; (4)Emitter-base voltage (IC = 0): 5 V; (5)Collector current: 4 A; (6)Collector peak current (t ≤ 10 ms): 7 A; (7)Base current: 1 A; (8)Total dissipation at Tc ≤ 25 ℃: 36 W; (9)Storage temperature: -65 to 150 ℃; (10)Max. Operating junction temperature: 150 ℃.
Features
BD436 features: (1)SGS-Thomson preferred salestypes; (2)Complementary PNP - NPN devices.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BD436 |
STMicroelectronics |
Transistors Bipolar (BJT) PNP Medium Power |
Data Sheet |
Negotiable |
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BD436G |
ON Semiconductor |
Transistors Bipolar (BJT) 4A 32V 36W PNP |
Data Sheet |
Negotiable |
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BD436S |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
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BD436STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
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BD436T |
ON Semiconductor |
Transistors Bipolar (BJT) 4A 32V 36W PNP |
Data Sheet |
Negotiable |
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BD436TG |
ON Semiconductor |
Transistors Bipolar (BJT) 4A 32V 36W PNP |
Data Sheet |
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