Product Summary

The IRF7807VD1TRPBF is a Chip-Set for DC-DC converter. The IRF7807VD1TRPBF employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of the IRF7807VD1TRPBF devices provides the best cost/performance solution for system voltages, such as 3.3V and 5V.

Parametrics

IRF7807VD1TRPBF absolute maximum ratings: (1)Drain-Source voltage VDS: 30V; (2)Gate-Source voltage VGS: ±12V; (3)Continuous drain or source 25℃ ID: 8.3A; (4)Current (VGS 3 4.5V) 70℃: 6.6A; (5) Pulsed drain current. IDM: 66A; (6)Power dissipation 25℃ PD: 2.5W; 70℃: 1.6W; (7)Junction & Storage temperature range TJ, TSTG: –55 to 150℃; (8) Continuous source current (Body diode). IS: 2.5A; (9) Pulsed source current ISM: 66A.

Features

IRF7807VD1TRPBF features: (1)N channel application specific MOSFETs; (2)Ideal for mobile DC-DC converters; (3)Low conduction losses; (4)Low switching losses.

Diagrams

IRF7807VD1TRPBF pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Data Sheet
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100-250: $0.27
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