(China (Mainland))
Product Summary
The IRF7233 is a HEXFET power MOSFET. The IRF7233 from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The IRF7233 benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
Parametrics
IRF7233 absolute maximum ratings: (1)VDS, drain- source voltage: -12 V; (2)ID @ TA = 25°C, continuous drain current, VGS @ -4.5V: ±9.5 A; (3)ID @ TA= 70°C, continuous drain current, VGS @ -4.5V: ±6.0 A; (4)IDM, pulsed drain current: ±76 A; (5)PD @TA = 25°C, power dissipation: 2.5 W; (6)PD @TA = 70°C, power dissipation: 1.6 W; (7)Linear derating factor: 0.02 W/°C; (8)EAS, single pulse avalanche energy: 60 mJ; (9)VGS, gate-to-source voltage: ± 12 V; (10)TJ, TSTG, junction and storage temperature range: -55 to + 150 °C.
Features
IRF7233 features: (1)Ultra low On-resistance; (2)P-Channel MOSFET; (3)Surface mount; (4)Available in tape & reel; (5)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF7233 |
|
MOSFET P-CH 12V 9.5A 8-SOIC |
Data Sheet |
Negotiable |
|
||||||||||||
 |
IRF7233PBF |
International Rectifier |
MOSFET |
Data Sheet |
|
|
||||||||||||
|
IRF7233TRPBF |
International Rectifier |
MOSFET MOSFT PCh -12V -9.5A 20mOhm 49nC |
Data Sheet |
|
|
||||||||||||
|
IRF7233TR |
|
MOSFET P-CH 12V 9.5A 8-SOIC |
Data Sheet |
Negotiable |
|
||||||||||||
