(China (Mainland))
Product Summary
The IRF7201TR is a fifth generation HEXFET power MOSFET from international rectifier . It is utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF7201TR absolute maximum ratings: (1)Drain- Source Voltage: 30 V; (2)Continuous Drain Current, VGS 10V: 7.3 A; (3)Continuous Drain Current, VGS 10V: 5.8 A; (4)Pulsed Drain Current: 58 A; (5)Power Dissipation: 2.5 W; (6)Power Dissipation: 1.6 W; (7)Linear Derating Factor: 0.02 W/°C; (8)Gate-to-Source Voltage: ± 20 V; (9)Gate-to-Source Voltage Single Pulse tp<10μs: 30 V; (10)Single Pulse Avalanche Energy: 70 mJ; (11)Peak Diode Recovery dv/dt: 5.0 V/ns; (12)Junction and Storage Temperature Range: -55 to + 150 °C.
Features
IRF7201TR features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)N-Channel MOSFET; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRF7201TR |
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MOSFET N-CH 30V 7.3A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7201TRPBF |
International Rectifier |
MOSFET MOSFT 30V 7A 30mOhm 19nC |
Data Sheet |
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