Product Summary
The BSC079N03S is an OptiMOS 2 Power-Transistor.
Parametrics
BSC079N03S absolute maximum ratings: (1)Continuous drain current I D T C=25 °C: 40 A; (2)Avalanche energy, single pulse EAS I D=40 A, RGS=25 Ω: 120 mJ; (3)Reverse diode dv /dt dv /dt I D=40 A, VDS=24 V, di /dt =200 A/μs, T j,max=150 °C: 6 kV/μs; (4)Gate source voltage VGS: ±20 V; (5)Power dissipation Ptot T C=25 °C: 60 W; (6)Operating and storage temperature T j, T stg: -55 to 150 °C; (7)IEC climatic category; DIN IEC 68-1: 55/150/56°C.
Features
BSC079N03S features: (1)Fast switching MOSFET for SMPS; (2)Optimized technology for notebook DC/DC converters; (3)Qualified according to JEDEC1)for target applications; (4)N-channel; (5)Logic level; (6)Excellent gate charge x RDS(on)product (FOM); (7)Very low on-resistance RDS(on); (8)Superior thermal resistance; (9)Avalanche rated; (10)Pb-free plating; RoHS compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSC079N03S G |
Infineon Technologies |
MOSFET N-CH 30V 14.6A |
Data Sheet |
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BSC079N03SG |
MOSFET N-CH 30V 40A TDSON-8 |
Data Sheet |
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