(China (Mainland))
Product Summary
The 2SD1664 T100R is a medium power transistor (32V, 1A).
Parametrics
2SD1664 T100R absolute maximum ratings: (1)collector-base voltage: 40 V;(2)collector-emitter voltage: 32 V;(3)emitter-base voltage: 5 V;(4)collector current: 1 or 2 A;(5)junction temperature: 150℃;(6)storage temperature: -55 to +150℃;(7)Collector power dissipation: 0.5 or 2 W.
Features
2SD1664 T100R features: (1)Low VCE(sat). VCE(sat) = 0.15 V(Typ.) (IC / IB= 0.5 A / 50 mA); (2)High VCEO, VCEO=80V; (3)Complements the 2SB1132. And the structure of this device is Epitaxial planar type and NPN silicon transistor.
Diagrams
