Product Summary

The 2SD1664 is a medium power transistor (32V, 1A).

Parametrics

2SD1664 absolute maximum ratings: (1)collector-base voltage: 40 V;(2)collector-emitter voltage: 32 V;(3)emitter-base voltage: 5 V;(4)collector current: 1 or 2 A;(5)junction temperature: 150℃;(6)storage temperature: -55 to +150℃;(7)Collector power dissipation: 0.5 or 2 W.

Features

2SD1664 features: (1)Low VCE(sat). VCE(sat) = 0.15 V(Typ.) (IC / IB= 0.5 A / 50 mA); (2)High VCEO, VCEO=80V; (3)Complements the 2SB1132. And the structure of this device is Epitaxial planar type and NPN silicon transistor.

Diagrams

2SD1664 external dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SD1664
2SD1664
Other

Data Sheet
Negotiable 
2SD1664 T100 R
2SD1664 T100 R
Other

Data Sheet
Negotiable 
2SD1664T100Q
2SD1664T100Q
ROHM Semiconductor
Transistors Bipolar (BJT) NPN 32V 1A
Data Sheet
0-1: $0.38
1-25: $0.28
25-100: $0.20
100-500: $0.12
500-1000: $0.09
2SD1664T100R
2SD1664T100R
ROHM Semiconductor
Transistors Bipolar (BJT) NPN 32V 1A
Data Sheet
0-1: $0.33
1-25: $0.25
25-100: $0.18
100-500: $0.12
500-1000: $0.09
2SD1664T100P
2SD1664T100P
ROHM Semiconductor
Transistors Bipolar (BJT) NPN 32V 1A
Data Sheet
0-1: $0.23
1-25: $0.17
25-100: $0.13
100-500: $0.10
500-1000: $0.07
2SD1664FT100Q
2SD1664FT100Q
ROHM Semiconductor
Transistors Bipolar (BJT) NPN DRIVER
Data Sheet
Negotiable