(China (Mainland))
Product Summary
The 2sc3632-z-e1 is a kind of Silicon NPN Epitaxial Transistor, which is designed for High Voltage Switching, especially in Hybrid Integrated Circuits.
Parametrics
2sc3632-z-e1 absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: 600 V; (2)Collector-to-Emitter Voltage, VCEO: 600 V; (3)Emitter-to-Base Voltage, VEBO: 7 V; (4)Collector Current, IC: 1 A; (5)Base Current, IB: 0.4 A; (6)Total Power Dissipation, PT: 2.0 W; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: -55 to +150℃.
Features
2sc3632-z-e1 features: (1)High Voltage VCEO = 600 V; (2)High Speed tf < 0.5 us; (3)Complement to 2SA1413-Z.
Diagrams
